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| MIG75J6CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75J6CSB1W (600V/75A 6in1) High Power Switching Applications Motor Control Applications * * * * * Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.8 V (typ.) UL recognized: File No. E87989 Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) Open V 3. 10. 17. IN (U) FO (W) IN (X) 4. 11. 18. U GND (U) IN (W) IN (Y) 5. 12. 19. B VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) N 7. 14. IN (V) FO (L) P 1 2002-08-26 MIG75J6CSB1W Package Dimensions: TOSHIBA 2-108G1D 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2 2002-08-26 MIG75J6CSB1W Signal Terminal Layout 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 3 2002-08-26 MIG75J6CSB1W Maximum Ratings (Tj = 25C) Stage Characteristics Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Input voltage Control Fault output voltage Fault output current Operating temperature Storage temperature range Module Isolation voltage Screw torque (terminal) Screw torque (mounting) AC 1 min M4 M5 FO-GND Terminal FO sink current 3/4 3/4 Tc = 25C, DC Tc = 25C, DC Tc = 25C, DC 3/4 VD-GND Terminal IN-GND Terminal Condition P-N power terminal 3/4 Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Tc Tstg VISO 3/4 3/4 Ratings 450 600 75 75 460 150 20 20 20 14 -20 to +100 -40 to +125 2500 2 3 Unit V V A A W C V V V mA C C V Nm Nm Electrical Characteristics 1. Inverter Stage Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 600 V VD = 15 V IC = 75 A VIN = 15 V (R) 0 V IF = 75 A, Tj = 25C VCC = 300 V, IC = 75 A VD = 15 V, VIN = 15 V 0 V Tj = 25C, Inductive load (Note 1) Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 3/4 3/4 1.5 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 1.8 2.0 1.8 1.3 0.25 0.2 1.1 0.2 Max 1 10 2.2 3/4 2.2 2.2 3/4 3/4 2.1 3/4 ms V V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) Switching time trr toff tc (off) Note 1: Switching time test circuit and timing chart 4 2002-08-26 MIG75J6CSB1W 2. Control Stage (Tj = 25C) Characteristics Control circuit current Input on signal voltage Input off signal voltage Protection Fault output current Normal Over current protection trip level Short circuit protection trip level Over current cut-off time Over temperature protection Control supply under voltage protection Fault output pulse width Trip level Reset level Trip level Reset level Inverter Inverter High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) OT Case temperature OTr UV UVr tFO VD = 15 V 3/4 VD = 15 V Test Condition Min 3/4 3/4 1.4 2.2 3/4 3/4 120 120 3/4 110 3/4 11.0 12.0 1 Typ. 13 39 1.6 2.5 10 3/4 3/4 3/4 5 118 98 12.0 12.5 2 Max 17 51 1.8 2.8 12 mA 0.1 3/4 3/4 3/4 125 3/4 12.5 V 13.0 3 ms C A A ms V V Unit mA VD = 15 V VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V 3. Thermal Resistance (Tc = 25C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT Inverter FRD Compound is applied Min 3/4 3/4 3/4 Typ. 3/4 3/4 0.017 Max 0.270 0.313 3/4 C/W Unit C/W 5 2002-08-26 MIG75J6CSB1W Switching Time Test Circuit Intelligent power module TLP559 VD 0.1 mF 15 kW OUT IN 15 V 10 mF GND VS P GND U (V, W) VCC VD IF = 16 mA PG 15 V 10 mF GND 0.1 mF 15 kW OUT IN VS N GND Timing Chart Input Pulse 15 V VIN Waveform 0 2.5 V 1.6 V 90% Irr IC Waveform Irr 90% trr 20% Irr VCE Waveform 10% 10% tc (off) 10% 10% tc (on) toff ton 6 2002-08-26 MIG75J6CSB1W 4. Recommended conditions for application Characteristics Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N Power terminal VD-GND Signal terminal PWM Control Switching time test circuit (see page.6) (Note 2) Min 3/4 13.5 3/4 3 Typ. 300 15 3/4 3/4 Max 400 16.5 20 3/4 Unit V V kHz ms Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 7 2002-08-26 MIG75J6CSB1W IC - VCE 150 VD = 17 V 125 13 V 125 150 IC - VCE VD = 17 V 13 V (A) (A) 15 V 100 15 V 100 IC Collector current 75 Collector current Common emitter Tj = 25C IC 75 50 50 25 25 Common emitter Tj = 125C 4 0 0 1 2 3 4 0 0 1 2 3 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Switching time - IC 10 5 3 10 5 3 Switching time - IC ton (ms) (ms) 1 0.5 0.3 ton toff 1 0.5 0.3 toff Switching time Switching time tc (on) tc (off) tc (on) tc (off) Tj = 25C VCC = 300 V VD = 15 V L-Load 20 40 60 80 100 0.1 0.05 0.03 0.1 0.05 0.03 Tj = 125C VCC = 300 V VD = 15 V L-Load 20 40 60 80 100 0.01 0 0.01 0 Collector current IC (A) Collector current IC (A) IF - VF 150 100 trr, Irr - IF Peak reverse recovery current Irr (A) Peak reverse recovery time trr (10 ns) 125 Irr 30 trr (A) Forward current IF 100 75 10 50 Common cathode 25 :Tj = 25C :Tj = 125C 3 Common cathode :Tj = 25C :Tj = 125C 0 0 1 2 3 4 1 0 20 40 60 80 100 Forward voltage VF (V) Forward current IF (A) 8 2002-08-26 MIG75J6CSB1W OC - TC (mA) 300 30 ID (H) - fc Over current protection trip level OC (A) Inverter stage 200 High side control circuit current ID (H) 25 20 15 100 10 5 VD = 15 V Tj = 25C 0 0 5 10 15 20 25 VD = 15 V 0 0 25 50 75 100 125 150 Case temperature TC (C) Carrier frequency fc (kHz) ID (L) - fc (mA) 100 90 120 140 Reverse bias SOA OC Low side control circuit current ID (L) (A) IC Collector current VD = 15 V Tj = 25C 5 10 15 20 25 80 70 60 50 40 30 20 100 80 60 40 20 10 0 0 0 0 Tj < 125C = VD = 15 V 100 200 300 400 500 600 700 Carrier frequency fc (kHz) Collector-emitter voltage VCE (V) Rth (t) - tw Inverter stage (C/W) 1 Tc = 25C 0.5 0.3 Diode Transisto 0.1 0.05 0.03 Transient thermal resistance Rth (t) 0.01 0.005 0.003 0.001 0.001 0.01 0.1 1 10 Pulse width tw (s) 9 2002-08-26 MIG75J6CSB1W Turn on loss - IC 10 5 3 10 5 3 Turn off loss - IC (mJ) 1 0.5 0.3 (mJ) 1 0.5 0.3 Eon Turn on loss 0.1 0.05 0.03 VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 20 40 60 80 100 Turn off loss Eoff 0.1 0.05 0.03 VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 20 40 60 80 100 0.01 0 0.01 0 Collector current IC (A) Collector current IC (A) 10 2002-08-26 MIG75J6CSB1W RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 11 2002-08-26 |
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